FTIR ellipsometer IR-VASE

From Woollam Co.

The IR-VASE is the first and only spectroscopic ellipsometer to cover the spectral range from 1.7 to 30 microns (333 to 5900 wavenumbers). The IR-VASE can determine both n and k for materials over the entire width of the spectral range without extrapolating data outside the measured range, as with a Kramers-Kronig analysis. Like other Woollam ellipsometers, the IR-VASE is perfect for thin films or bulk materials including dielectrics, semiconductors, polymers and metals.

  • Rotating compensator ellipsometer
  • Widest spectral range
  • Vertical sample mount
  • Combination of ellipsometry and transmittance

Further information

Non-destructive characterization

The IR-VASE offers non-contact measurements of many different material properties including thickness, optical constants, material composition, chemical bonding, doping concentration, and more. Measurements do not require vacuum and can be used to study liquid/solid interfaces common in biology and chemistry applications.

No baseline or reference sample required

Ellipsometry is a modulation technique that does not require scans or reference samples to maintain accuracy. Even samples that are smaller than the beam diameter can be measured because the entire beam does not need to be collected.

Highly accurate measurement

Patented calibration and data acquisition procedures remove effects of imperfect optical elements to provide accurate measurements of Ψ and Δ.


  • Spectral range: 1.7 µm to 30 µm (further with good reflective samples)
  • Verticale sample mount
  • Motorized angle of incidence goniometer: 32° to 90°
  • Ellipsometry, transmittance and reflectance, Mueller matrix, generalized ellipsometry, depolarisation


Epitaxial layers and doping concentration and doping profiles At infrared wavelengths, the difference in free-carrier levels can cause optical contrast between epitaxial or implanted layers. This gives IR-VASE excellent sensitivity to epitaxial layer thickness and substrate doping concentration. The ellipsometer also has good sensitivity to carrier gradients at interfaces. Carrier profiles show near-perfect in agreement when nondestructive IR-VASE and destructive SIMS measurements are compared.
Phonon structure (compound semiconductors) The wide spectral range IR-VASE is important for phonon absorption studies. Data on the left show phonon modes of a GaN / AlGaN laser structure, modeled to determine alloy ratios, doping concentrations, and film quality.
Molecular bond vibrations Like standard FTIR spectroscopy, IR ellipsometry relies on the information about molecular bond vibrations. Infrared absorption caused by these vibrations can be studied in bulk or thin film materials. IR ellipsometry offers increased sensitivity over FTIR spectroscopy. It also presents the advantage of obtaining both n and k rather than just absorbance values. Figures below show measured optical constants of a silicone thin film with vibrational absorptions labeled.
Optical coatings
Multilayer characterization


Spectroscopic ellipsometers product overview
IR-VASE Mark II brochure


Richard Schuster
Sales Manager
+420 420 601123-593
Write e-mail
Richard Schuster

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Quantum Design

Krivoklatska 37
199 00 Praha 9
Czech Republic

Phone:+420 607 014 278
Richard SchusterSales Manager
+420 420 601123-593
Write e-mail